The thermodynamic efficiency of various devices is of wide interest because of the relevance of this parameter for energy conversion. The classic limiting efficiency of a solar cell was analyzed by Shockley and Queisser (1961). They also established a model to describe the electrical behavior of the diode that constitutes the solar cell. This time, the model came from detailed balance arguments and, at first sight, does not give the same results as the standard model. According to Shockley and Queisser (1961), the thermodynamic efficiency for an ideal single homo-junction cell is 31%. The efficiency of a single-junction device is limited by transmission losses of photons with energies below the band-gap and thermal relaxation of carriers created by photons with energies above the band-gap.
In the classic case, every photon absorbed in a solar cell at most one electron–hole pair. Kodolinski et al. (1993) showed quantum efficiency higher than 1 in the short-wavelength range of a-Si solar cell. This can be explained as an optically induced Auger mechanism: the energy in excess of the band-gap that one of the carriers receives from a high-energy photon is used in a second electron–hole generation. This result has led to the revision of the Shockley–Queisser model of the ideal solar cell, widely accepted as the physical limit of PV conversion.
Several methods have been offered to increase the power conversion efficiency of solar cells, including tandem cells, impurity-band and intermediate-band devices, hot-electron extraction, and carrier multiplication, the so-called “third generation” PV. these methods will be discussed in the next posts.